秒动科技供应雪崩二极管（APD，Avalanche photodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。
Series 11: Blue sensitivity enhanced (for biomedical applications)
Order #
Type
Active Area
Dark Current
Rise Time
Chip
Package
Size
Area
M=100
410nm 50Ω
mm
mm2
nA
ns
500970
AD800-11
TO52S1
Ø0.8
0.5
1
1
500967
AD1900-11
TO5i
Ø1.95
3
5
2
Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz)
Order #
Type
Active Area
Dark Current
Rise Time
Chip
Package
Size
Area
660nm M=100
660nm 50Ω
mm
mm2
A/W
GHz
501828
AD100-12
LCC6.1
Ø0.1
0.008
50
typ.3, min.2
501829
AD100-12
LCC6.1f
Ø0.1
0.008
44
typ.3, min.2
501831
AD100-12
TO52S1
Ø0.1
0.008
50
typ.3, min.2
501157
AD230-12
LCC6.1
Ø0.23
0.042
50
typ.3, min.2
501156
AD230-12
LCC6.1f
Ø0.23
0.042
44
typ.3, min.2
501820
AD230-12
LCC6.1f
Ø0.23
0.042
44
typ.3, min.2
501162
AD230-12
TO52S1
Ø0.23
0.042
50
typ.3, min.2
501155
AD500-12
LCC6.1
Ø0.5
0.196
50
typ.3, min.2
501154
AD500-12
LCC6.1f
Ø0.5
0.196
44
typ.3, min.2
501819
AD500-12
LCC6.1f
Ø0.5
0.196
44
typ.3, min.2
501163
AD500-12
TO52S1
Ø0.5
0.196
50
typ.3, min.2
Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds)
Order #
Type
Active Area
Dark Current
Rise Time
Chip
Package
Size
Area
M=100
M=100 20V 50Ω
mm
mm2
nA
ns
501810
AD100-8
LCC6.1
Ø0.1
0.008
0.05
<0.18
501811
AD100-8
LCC6.1f
Ø0.1
0.008
0.05
<0.18
501812
AD100-8
LCC6.1f
Ø0.1
0.008
0.05
<0.18
500011
AD100-8
TO52S1
Ø0.1
0.008
0.05
<0.18
501171
AD100-8
TO52S3
Ø0.1
0.008
0.05
<0.18
501078
AD230-8
LCC6.1
Ø0.23
0.04
0.3
0.18
501079
AD230-8
LCC6.1f
Ø0.23
0.04
0.3
0.18
501805
AD230-8
LCC6.1f
Ø0.23
0.04
0.3
0.18
500019
AD230-8
TO52S1
Ø0.23
0.04
0.3
0.18
500022
AD230-8
TO52S3
Ø0.23
0.04
0.3
0.18
501496
AD230-8
ODFN2x2
Ø0.23
0.04
0.3
0.18
501077
AD500-8
LCC6.1
Ø0.5
0.2
0.5
0.35
501076
AD500-8
LCC6.1f
Ø0.5
0.2
0.5
0.35
501809
AD500-8
LCC6.1f
Ø0.5
0.2
0.5
0.35
500030
AD500-8
TO52S1
Ø0.5
0.2
0.5
0.35
500305
AD500-8
TO52S2
Ø0.5
0.2
0.5
0.35
500155
AD500-8
TO52S3
Ø0.5
0.2
0.5
0.35
500947
AD800-8
TO52S1
Ø0.8
0.5
2
0.7
501117
AD1100-8
TO52S1
Ø1.13
1
4-6
1
500015
AD1900-8
TO5i
Ø1.95
3
15
1.4
501194
AD3000-8
TO5i
Ø3
7.07
30
2
500160
AD5000-8
TO8i
Ø5
19.63
60
3
500002
AD230-8-2.3G
TO5
AD230-8-2.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.
500003
AD500-8-1.3G
TO5
AD500-8-1.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.
Series 9: NIR sensitivity enhanced-900nm (specifically for LIDAR and laser rangefinders)
Order #
Type
Active Area
Dark Current
Rise Time
Chip
Package
Size
Area
M=100
M=100
mm
mm2
nA
ns
501815
AD100-9
LCC6.1
Ø0.1
0.008
0.1
<0.5
501816
AD100-9
LCC6.1f
Ø0.1
0.008
0.1
<0.5
501123
AD230-9
LCC6.1
Ø0.23
0.04
0.5
0.5
501817
AD230-9
LCC6.1f
Ø0.23
0.04
0.5
0.5
500020
AD230-9
TO52S1
Ø0.23
0.04
0.5
0.5
501265
AD230-9
TO52S1F2
Ø0.23
0.04
0.5
0.5
500023
AD230-9
TO52S3
Ø0.23
0.04
0.5
0.5
501122
AD500-9
LCC6.1
Ø0.5
0.2
0.8
0.55
501818
AD500-9
LCC6.1f
Ø0.5
0.2
0.8
0.55
500031
AD500-9
TO52S1
Ø0.5
0.2
0.8
0.55
500590
AD500-9
TO52S1F2
Ø0.5
0.2
0.8
0.55
500306
AD500-9
TO52S2
Ø0.5
0.2
0.8
0.55
500156
AD500-9
TO52S3
Ø0.5
0.2
0.8
0.55
501196
AD800-9
TO52S1
Ø0.8
0.5
2
0.9
501197
AD1100-9
TO52S1
Ø1.13
1
4
1.3
501208
AD1500-9
TO5i
Ø1.5
1.77
2
2
501198
AD3000-9
TO5i
Ø3
7.07
30
2
500161
AD5000-9
TO8i
Ø5
19.63
60
3
500756
AD230-9-400M
TO5
AD230-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.
500490
AD500-9-400M
TO5
AD500-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.
Multi-Element Array
501099
8AA0.4-9
SOJ22GL
APD Array 8 Elements, QE>80% at 760-910nm with NTC
501098
16AA0.13-9
SOJ22GL
APD Array 16 Elements, QE>80% at 760-910nm with NTC
500038
16AA0.13-9
DIL18
APD Array 16 Elements, QE>80% at 760-910nm
501097
16AA0.4-9
SOJ22GL
APD Array 16 Elements, QE>80% at 760-910nm
50130802
25AA0.04-9
BGA
APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC
50130802
25AA0.16-9
BGA
APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC
50130702
64AA0.04-9
BGA
APD Array 64 (8×8) elements, QE>80% at 760-910nm with PTC
501207
QA4000-9
TO8Si
Quadrant Avalanche Photodiode, QE>80% at 760-910nm
Series 10: NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources)
Order #
Type
Active Area
Dark Current
Rise Time
Chip
Package
Size
Area
M=100
M=100 1064nm
mm
mm2
nA
ns
500953
AD500-10
TO5i
Ø0.5
0.2
1.5
4
501233
AD800-10
TO5i
Ø0.8
0.5
3
5
500883
AD1500-10
TO5i
Ø1.5
1.77
7
5
50123401
AD4000-10
TO8Si
Ø4
12.56
50
6
501387
AD800-10
TO8S
High speed, high gain, low noise, low power consumption hybrid (AD800-10+TIA)
Multi-Element Array
501174
QA4000-10
TO8Si
Quadrant Avalanche Photodiode, High QE at 850-1070nm
https://www.first-sensor.com/en/products/components/detectors/avalanche-photodiodes-apd
www.NewOpto.com
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