TPS73733DCQR 低压差稳压器 TI德州仪器原装

1 Features 3 Description

The TPS737xx family of linear low-dropout (LDO)

1• Stable With 1-μF or Larger Ceramic Output

voltage regulators uses an NMOS pass element in a Capacitor voltage-follower configuration. This topology is

• Input Voltage Range: 2.2 V to 5.5 V relatively insensitive to output capacitor value and

• Ultralow Dropout Voltage: 130 mV Typical at 1 A ESR, allowing a wide variety of load configurations.

• Excellent Load Transient Response—Even With Load transient response is excellent, even with a

Only small 1-μF ceramic output capacitor. The NMOS 1-μF Output Capacitor

topology also allows very low dropout.

• NMOS Topology Delivers Low Reverse Leakage

Current The TPS737xx family uses an advanced BiCMOS

process to yield high precision while delivering very

• 1% Initial Accuracy low dropout voltages and low ground pin current.

• 3% Overall Accuracy Over Line, Load, and Current consumption, when not enabled, is less than

Temperature 20 nA and ideal for portable applications. These

• Less Than 20 nA Typical I devices are protected by thermal shutdown and Q in Shutdown Mode

foldback current limit. • Thermal Shutdown and Current Limit for Fault

Protection For applications that require higher output voltage

• Available in Multiple Output Voltage Versions accuracy, consider TI's TPS7A37xx family of 1%

overall accuracy, 1-A low-dropout voltage regulators.

TPS73733DCQR TPS73733DCQRTPS73733DCQRTPS73733DCQR
1特征3描述

线性低辍学率(LDO)的TPS737xx族

1•稳定1-μF或更大陶瓷输出

电压调节器在电容压随器配置中使用NMOS通元件。这种拓扑是

•输入电压范围:2.2 V ~ 5.5 V对输出电容值相对不敏感

•超低电压:在1 A ESR下的典型电压为130 mV，允许多种负载配置。

•优秀的负载瞬态响应——即使有负载瞬态响应也很优秀，即使有a

只有小1-μF陶瓷电容器的输出。NMOS 1-μF输出电容器

拓扑也允许非常低的辍学率。

•NMOS拓扑提供低反向泄漏

目前TPS737xx系列使用的是先进的BiCMOS

生产过程精度高，同时交货非常

·1%的初始精度、低电压、低接地针电流。

•不启用时，在线、负载和当前消耗的总精度低于3%

温度为20na，适用于便携设备。这些

•在关机模式下，受热关机和Q保护的典型I设备不足20台

当前限制返送。•故障的热关闭和电流限制

用于需要较高输出电压的应用程序的保护

•可在多个输出电压版本精度，考虑TI的TPS7A37xx家庭1%

整体精度，1-A低压差稳压器。