mos场效应管DTU50N03
地区：广东 深圳
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| Part_No | Package | Configuration | VDS(V) | VGS(V) | Vt(V) | RDS(on) Max(Typ)( mΩ) | ID(A) | ||
| Vg_10v | Vg_4.5v | Vg_2.5v | |||||||
| DTU30N02 | TO-252 | Single-N | 20 | ±12 | 0.65 | - | 24 | 33 | 30 |
| DTU40N03 | TO-252 | Single-N | 30 | ±20 | 1.6 | 15 | 24 | - | 40 |
| DTU15P03 | TO-252 | Single-P | -30 | ±20 | -1.5 | 43 | 70 | - | 15 |
| DTU50N03 | TO-252 | Single-N | 30 | ±20 | 1.5 | 4.5 | 7.5 | - | 50 |
| DTU50P03 | TO-252 | Single-P | -30 | ±20 | -1.5 | 15 | 22 | - | 50 |
| DTU80P03 | TO-252 | Single-P | -30 | ±20 | -1.5 | 7.8 | 9.2 | - | -80 |
| DTU40N06 | TO-252 | Single-N | 60 | ±25 | 1.8 | 18 | 28 | - | 40 |
| DTU40P06 | TO-252 | Single-P | -60 | ±20 | -2 | 35 | 42 | - | -40 |
| DTU40N10 | TO-252 | Single-N | 100 | ±20 | 2 | 40 | 45 | - | 40 |
| DTU15N10 | TO-252 | Single-N | 100 | ±20 | 2 | 95 | 115 | - | 15 |
DTU
DTU50N03
绝缘栅(MOSFET)
N沟道
增强型
UNI/一般用途
SMD(SO)/表面封装
IGBT绝缘栅比极
100V
14.7A
