200VN-频场效应管 SI4490DY-T1-GE3 VISHAY品牌 全新原装
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SI4490DY-T1-GE3
PRODUCT SUMMARY
0.080 @ VGS = 10 V
0.090 @ VGS = 6.0 V
4.0
3.8
VDS (V)
rDS(on) (Ω)
ID (A)
200
ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)
Continuous Drain Current (TJ = 150C) TA = 25C
TA = 70C
4.0
3.0
2.85
2.3
Maximum Power Dissipationa TA = 25C
TA = 70C
3.1
2.0
1.56
1.0
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
200
200
V
Gate-Source Voltage
VGS
±20
±20
V
ID
A
Pulsed Drain Current
IDM
40
40
A
Avalanch Current L = 0.1 mH
IAS
15
15
A
Continuous Source Current (Diode Conduction)
IS
2.6
1.3
A
PD
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
-55 to 150
℃
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambienta T≤10 sec
Steady State
33
65
40
80
Parameter
Symbol
Typical
Maximum
Unit
RthJA
℃/W
Maximum Junction-to-Foot (Drain) Steady State
RthJF
17
21
℃/W
SI4490DY-T1-GE3
VISHAY
SOP-8
无铅环保型
贴片式
卷带编带包装
