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N档场效应晶体管 AO3414/A03414 Alpha&Omega品牌 全新原装 进口

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AO3414 / A03414

N-Channel Enhancement Mode Field Effect Transistor



General Description
The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. Standard Product AO3414 is Pb-free (meets ROHS & Sony 259 specifications). AO3414L
is a Green Product ordering option. AO3414 and AO3414L are electrically identical.

Features
VDS (V) = 20V
ID = 4.2 A (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 4.5V)
RDS(ON) < 63mΩ (VGS = 2.5V)
RDS(ON) < 87mΩ (VGS = 1.8V)

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter
 Symbol
 Symbol
 Units
Drain-Source Voltage
 VDS
 20 V
Gate-Source Voltage
 VGS
 ±8
 V

Continuous Drain Current           TA=25°C

                                                 TA=70°C

ID

4.2

3.2

A
Pulsed Drain Current
 IDM
 15 A

Power Dissipation                       TA=25°C

                                                  TA=70°C

PD

1.4

0.9

W
Junction and Storage Temperature Range
 TJ, TSTG
 -55 to 150
 V


Thermal Characteristics

Parameter
 Symbol
 Typ
 Max
 Units
Maximum Junction-to-Ambient                  t ≤ 10s
 RθJA
 70 90 °C/W
aximum Junction-to-Ambient                   Steady-State
 RθJA
 100 125 °C/W
Maximum Junction-to-Lead                      Steady-State
 RθJL
 63 80 °C/W

型号/规格

AO3414/A03414

品牌/商标

Alpha & Omega

环保类别

无铅环保型

封装

SOT-23