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TCLT1018
FEATURES:
• SMD low profile 4 lead package • High isolation 5000 VRMS
• CTR flexibility available see order information
• Extra low coupling capacitance
• Connected base
• DC input with transistor output
• Temperature range -55 °C to +110 °C
• Creepage distance > 8 mm
DESCRIPTION:
The TCLT101. series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead LSOP package.
APPLICATIONS:
• Switchmode power supplies
• Computer peripheral interface
• Microprocessor system interface
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
INPUT:
OUTPUT:
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
6
V
Forward current
IF
60
mA
Forward surge current
tp ≤ 10 μs
IFSM
1.5
A
Power dissipation
Pdiss
100
mW
Junction temperature
Tj
125
°C
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Power dissipation
Pdiss
150
mW
Junction temperature
Tj
125
°C
TCLT1018
VISHAY
LSOP-4
光耦