静态存储器IC芯片 CY62128EV30LL-45ZAXI CYPRESS品牌 全新原装 进口

CY62128EV30LL-45ZAXI

Features: 
• Very high speed: 45 ns
• Temperature ranges–
— Industrial: –40°C to +85°C
— Automotive-A: –40°C to +85°C
— Automotive-E: –40°C to +125°C
• Wide voltage range: 2.20V – 3.60V
• Pin compatible with CY62128DV30
• Ultra low standby power
— Typical standby current: 1 μA
— Maximum standby current: 4 μA
• Ultra low active power
— Typical active current: 1.3 mA @ f = 1 MHz
• Easy memory expansion with CE1, CE2 and OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• Offered in Pb-free 32-pin SOIC, 32-pin TSOP I, and 32-pin
STSOP packages

Functional Description: 
The CY62128EV30 is a high performance CMOS static RAM
module organized as 128K words by 8 bits. This device
features advanced circuit design to provide ultra low active
current. This is ideal for providing More Battery Life™ (MoBL®)
in portable applications such as cellular telephones. The
device also has an automatic power down feature that significantly
reduces power consumption when addresses are not
toggling. Placing the device into standby mode reduces power
consumption by more than 99% when deselected (CE1 HIGH
or CE2 LOW). The eight input and output pins (IO0 through
IO7) are placed in a high impedance state when the device is
deselected (CE1 HIGH or CE2 LOW), the outputs are disabled
(OE HIGH), or a write operation is in progress (CE1 LOW and
CE2 HIGH and WE LOW).
To write to the device, take Chip Enable (CE1 LOW and CE2
HIGH) and Write Enable (WE) inputs LOW. Data on the eight
IO pins is then written into the location specified on the
Address pin (A0 through A16).
To read from the device, take Chip Enable (CE1 LOW and CE2
HIGH) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins appear on
the IO pins.

Maximum Ratings: 
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with
Power Applied...............................................55°C to +125°C
Supply Voltage to Ground
Potential ......................................... –0.3V to VCC(max) + 0.3V
DC Voltage Applied to Outputs
in High-Z State[4, 5] ......................... –0.3V to VCC(max) + 0.3V
DC Input Voltage[4,5] ...................... –0.3V to VCC(max) + 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current..................................................... > 200 mA