英飞凌 瞬态抑制二极管 IKW20N60T

英飞凌/INFINEON IC芯片 IKW20N60T

英飞凌/INFINEON 瞬态抑制二极管 IKW20N60T

Low Loss DuoPack :  IGBT in Trench and Fieldstop technology  with soft, fast recovery anti-parallel EmCon HE diode 
• Very low  VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5μs • Designed for :  - Frequency Converters  - Uninterrupted Power Supply • Trench and Fieldstop technology for 600 V applications offers :  - very tight parameter distribution  - high ruggedness, temperature stable behavior  - very high switching speed  - low VCE(sat) • Positive temperature coefficient in VCE(sat) • Low EMI • Low Gate Charge  • Very soft, fast recovery anti-parallel EmCon HE diode 

 • Complete product spectrum and PSpice Models 
 
Type VCE I C VCE(sat),Tj=25°C Tj,max Marking Code Package Ordering Code IKP20N60T 600V 20A 1.5V 175°C K20T60 TO-220 Q67040S4715 IKB20N60T 600V 20A 1.5V 175°C K20T60 TO-263 Q67040S4713 IKW20N60T 600V 20A 1.5V 175°C K20T60 TO-247 Q67040S4716 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC  40 20 Pulsed collector current, tp limited by Tjmax ICpuls 60 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 60 Diode forward current, limited by Tjmax TC = 25°C TC = 100°C IF  40 20 Diode pulsed current, tp limited by Tjmax IFpuls 60 A 
 Gate-emitter voltage VGE ±20 V Short circuit withstand time1)  VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tSC 5 μs Power dissipation TC = 25°C Ptot 166 W Operating junction temperature Tj  -40...+175 Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 °C 
 
1) Allowed number of short circuits: <1000; time between short circuits: >1s.