供应IS42S32400D-6TL ISSI存储器 原厂渠道优势现货，量大价优

FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply VDD VDDQ IS42S32400D 3.3V 3.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Auto Refresh (CBR) • Self Refresh with programmable refresh periods • 4096 refresh cycles every 64 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command • Available in Industrial Temperature • Available in 86-pin TSOP-II and 90-ball FBGA • Available in Lead-free。

OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks