供应原装UTC 8N80L-TF1-T 场效应管 MOSFET原装

N-MOS 8A 800V Rdson<1.45R(Max)

FEATURES
* Typically 35 nC Low Gate Charge
* RDS(ON) = 1.45Ω @VGS = 10V
* Typically 13 pF Low CRSS
* Improved dv/dt Capability
* Fast Switching Speed
* 100% Avalanche Tested
* RoHS–Compliant Product

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 800 V
Gate-Source Voltage VGSS ±30 V
Drain Current (Continuous) (TC=25°C) ID 8 A
Drain Current (Pulsed) (Note 1) IDM 32 A
Avalanche Current (Note 1) IAR 8 A
Single Pulse Avalanche Energy (Note 2) EAS 850 mJ
Repetitive Avalanche Energy (Note 1) EAR 17.8 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Power Dissipation
TO-220
PD
178
TO-220F/TO-220F1 59 W
TO-220F2 62
Linear Derating Factor above
TC=25°C
TO-220 1.43
TO-220F/TO-220F1 0.47 W/°C
TO-220F2 0.5
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C