|
Package
|
Package
|
TO-247
|
|
|
|
Collector-Emitter Voltage
|
VCES (V)
|
1200
|
|
|
|
Gate-Emitter Voltage
|
VGES (V)
|
±20
|
|
|
|
Collector Current
|
IC (A) @25
|
80
|
|
|
|
Collector Current
|
IC (A) @100
|
40
|
|
|
|
Pulsed Collector Current
|
ICM (A)
|
120
|
|
|
|
Diode Continuous Forward Current
|
IF (A)
|
40
|
|
|
|
Maximun Power Dissipation
|
PD (W) @25
|
357
|
|
|
|
Maximun Junction Temperature
|
TJ(℃)
|
150
|
|
|
|
Gate Threshold Voltage
|
VGE(th) (min) (V)
|
4.5
|
|
|
|
Gate Threshold Voltage
|
VGE(th)(max)(V)
|
7.5
|
|
|
|
Collector-Emitter Saturation Voltage
|
VCE(sat)(V)
|
2.1
|
|
|
|
Anti-Paralle Built In Diode
|
Built in Diode
|
Y
|
|
|
|
AEC-Q
|
AEC-Q
|
N
|
|
|
|
Package
|
Package
|
TO-92
|
|
|
|
Collector-Emitter Voltage
|
VCES (V)
|
1200
|
|
|
|
Gate-Emitter Voltage
|
VGES (V)
|
±20
|
|
|
|
Collector Current
|
IC (A) @25
|
80
|
|
|
|
Collector Current
|
IC (A) @100
|
40
|
|
|
|
Pulsed Collector Current
|
ICM (A)
|
120
|
|
|
|
Diode Continuous Forward Current
|
IF (A)
|
40
|
|
|
|
Maximun Power Dissipation
|
PD (W) @25
|
357
|
|
|
|
Maximun Junction Temperature
|
TJ(℃)
|
150
|
|
|
|
Gate Threshold Voltage
|
VGE(th) (min) (V)
|
4.5
|
|
|
|
Gate Threshold Voltage
|
VGE(th)(max)(V)
|
7.5
|
|
|
|
Collector-Emitter Saturation Voltage
|
VCE(sat)(V)
|
2.1
|
|
|
|
Anti-Paralle Built In Diode
|
Built in Diode
|
Y
|
|
|
|
AEC-Q
|
AEC-Q
|
N
· High speed switching
· High system efficiency
· Short Circuit Withstand Times > 10us
· Extremely enhanced avalanche capability
|
|
|
