供应IRFB3607PBF分立半导体 晶体管 MOSFET

IRFB3607PbF

IRFS3607PbF

IRFSL3607PbF

IRFB3607PBF

IRFB3607PBF

IRFB3607PBF

Applications

High Efficiency Synchronous Rectification in

SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

HEXFET

Benefits

Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

Fully Characterized Capacitance and

Avalanche SOA

Enhanced body diode dV/dt and dI/dt

Capability

w



 Calculated continuous current based on maximum allowable junction

temperature. Note that current limitations arising from heating of the

device leads may occur with some lead mounting arrangements.

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.12mH

RG = 25, IAS = 46A, VGS =10V. Part not recommended for use

above this value.

ISD  46A, di/dt  1920A/μs, VDD V(BR)DSS, TJ  175°C.

Pulse width  400μs; duty cycle  2%.

 Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

 Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

 Ris measured at TJ approximately 90°C.