MUR8100EG 整流器 1000V 8A UltraFast

MUR8100EG MUR8100EG MUR8100EG MUR8100EG

The MUR8100 and MUR880E diodes are designed for use in

switching power supplies, inverters and as free wheeling diodes.

Features

• 20 mJ Avalanche Energy Guaranteed

• Excellent Protection Against Voltage Transients in Switching

Inductive Load Circuits

• Ultrafast 75 Nanosecond Recovery Time

• 175°C Operating Junction Temperature

• Popular TO−220 Package

• Epoxy Meets UL 94 V−0 @ 0.125 in.

• Low Forward Voltage

• Low Leakage Current

• High Temperature Glass Passivated Junction

• Reverse Voltage to 1000 V

• Pb−Free Packages are Available*

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.9 Grams (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

The unclamped inductive switching circuit shown in

Figure 6 was used to demonstrate the controlled avalanche

capability of the new “E’’ series Ultrafast rectifiers. A

mercury switch was used instead of an electronic switch to

simulate a noisy environment when the switch was being

opened.

When S1 is closed at t0 the current in the inductor IL ramps

up linearly; and energy is stored in the coil. At t1 the switch

is opened and the voltage across the diode under test begins

to rise rapidly, due to di/dt effects, when this induced voltage

reaches the breakdown voltage of the diode, it is clamped at

BVDUT and the diode begins to conduct the full load current

which now starts to decay linearly through the diode, and

goes to zero at t2.