BT136双向可控硅TO-220-3 4A 25v

Absolute maximum ratings

Parameter Symbol Value Unit Test condition

peak repetitive off-stage voltage VDRM, VRRM 600 V

on-state RMS current IT(RMS) 4 A TL<66oC

NON repetitive surge peak on-state current ITSM 25 A Tp=20ms, Tj=25 oC

critical rate of rise on-state current dI/dt (Q1-3) 50 A/Ms

ITM=20A, TG=0.2A

peak gate current IGM 2 A

average gate power dissipation PG(AV) 0.5 W

storage temperature range Tstg -40 to +150 oC

operating junction temperature range Tj 125 oC

Electrical characteristics ( Tj=25oC) unless otherwise specified

Parameter Symbol Value Unit Test condition

gate trigger current IGT <10 mA T2+G+ VD=12V, IT=0.1A

<10 mA T2+G- VD=12V, IT=0.1A

<10 mA T2-G- VD=12V, IT=0.1A

<25 mA T2-G+ VD=12V, IT=0.1A

gate trigger voltage VGT <1.5 V VD=12V, IT=0.1A

hold current IH <30 mA VD=12V, IT=0.1A

critical rate of rise off-state voltage dv/dt >50 V/Ms

VD=67%VDRM

on-state voltage VTM <1.7 V IT=5A

off-state leakage current IDRM <0.5 mA VD=VDRM; Tj=125oC

Rth(j-a) 60

Rth(j-c) <3.7

thermal resistance oC/W

Rectron Inc reserves the right to make changes without notice to any product

specification herein, to make corrections, modifications, enhancements or other

changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi

lity for any errors or inaccuracies. Data sheet specifications and its information

contained are intended to provide a product description only. "Typical" paramet

ers which may be included on RECTRON data sheets and/ or specifications ca

n and do vary in different applications and actual performance may vary over ti

me. Rectron Inc does not assume any liability arising out of the application or

use of any product or circui

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