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产品属性
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Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V, and 15V logic input compatible
• Matched propagation delay for both channels
• Outputs in phase with inputs (IR2101) or out of
phase with inputs (IR2102)
• Also available LEAD-FREE
HIGH AND LOW SIDE DRIVER
Product Summary
VOFFSET 600V max.
IO+/- 130 mA / 270 mA
VOUT 10 - 20V
ton/off (typ.) 160 & 150 ns
Delay Matching 50 ns
IR2101(S)/IR2102(S) & (PbF)
Description IR2101PBF IR2101PBF IR2101PBF IR2101PBF
The IR2101(S)/IR2102(S) are high voltage, high speed
power MOSFET and IGBT drivers with independent
high and low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL
output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates up to 600 volts.
IR2101PBF
IR(国际整流器)
20 V
10 V
220 ns
- 40 C
+ 125 C
供应 MOSFET IRF3205PBF TO-220 N 通道
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