IR2102STRPBF电源管 驱动器600V130mA 160ns

Features  IR2102STRPBF IR2102STRPBF IR2102STRPBF IR2102STRPBF IR2102STRPBF

• Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout

• 3.3V, 5V, and 15V logic input compatible

• Matched propagation delay for both channels

• Outputs in phase with inputs (IR2101) or out of

phase with inputs (IR2102)

• Also available LEAD-FREE

HIGH AND LOW SIDE DRIVER

Product Summary

VOFFSET 600V max.

IO+/- 130 mA / 270 mA

VOUT 10 - 20V

ton/off (typ.) 160 & 150 ns

Delay Matching 50 ns

IR2101(S)/IR2102(S) & (PbF)

Description

The IR2101(S)/IR2102(S) are high voltage, high speed

power MOSFET and IGBT drivers with independent

high and low side referenced output channels. Proprietary

HVIC and latch immune CMOS technologies

enable ruggedized monolithic construction. The logic

input is compatible with standard CMOS or LSTTL

output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum

driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in

the high side configuration which operates up to 600 volts.

Symbol Definition Min. Max. Units

VB High side floating supply voltage -0.3 625

VS High side floating supply offset voltage VB - 25 VB + 0.3

VHO High side floating output voltage VS - 0.3 VB + 0.3

VCC Low side and logic fixed supply voltage -0.3 25

VLO Low side output voltage -0.3 VCC + 0.3

VIN Logic input voltage (HIN & LIN) -0.3 VCC + 0.3

dVS/dt Allowable offset supply voltage transient — 50 V/ns

PD Package power dissipation @ TA ≤ +25°C (8 lead PDIP) — 1.0

(8 lead SOIC) — 0.625

RthJA Thermal resistance, junction to ambient (8 lead PDIP) — 125

(8 lead SOIC) — 200