超快软恢复二极管IRGP50B60PDPBF

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 原装现货16+ 
IRGP50B60PD  RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. VCC = 80% (VCES), VGE = 20V, L = 28 μH, RG = 22 Ω. Pulse width limited by max. junction temperature.  Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.  Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES. 
型号/规格

IRGP50B60PDPBF

品牌/商标

IR

封装形式

TO-247

环保类别

无铅环保型

安装方式

直插式

包装方式

管装

功率特征

大功率