IGBT大功率晶体管IXGH48N60C3D1 30A600V

型号：IXGH48N60C3D1  IXGH48N60C3D1  IXGH48N60C3D1

厂家：IXYS/艾赛斯
类别：分离式半导体产品
家庭：IGBT - 单路
系列：GenX3™
IGBT 类型：PT
电压 - 集电极发射极击穿（最大）：600V
Vge, Ic时的最大Vce（开）：2.5V @ 15V，30A
电流 - 集电极 (Ic)（最大）：75A
功率 - 最大：300W
输入类型：标准型
安装类型：通孔
封装/外壳：TO-247-3
供应商设备封装：TO-247AD
包装：管件

标准包装：30

数量：11500

单价：面议

Symbol Test Conditions Maximum Ratings

VCES TJ = 25°C to 150°C 600 V

VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V

VGES Continuous ±20 V

VGEM Transient ±30 V

I

C25 TC = 25°C (Limited by Leads) 75 A

I

C110 TC = 110°C 48 A

I

D110 TC = 110°C 30 A

I

CM TC = 25°C, 1ms 250 A

I

A TC = 25°C 30 A

EAS TC = 25°C 300 mJ

SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω I

CM = 100 A

(RBSOA) Clamped Inductive Load @VCE < 600 V

PC TC = 25°C 300 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL 1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10 Seconds 260 °C

FC Mounting Torque 1.13/10 Nm/lb.in

Weight 6 g

Symbol Test Conditions Characteristic Values

(TJ

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

VGE(th) IC = 250μA, VCE = VGE 3.0 5.5 V

I

CES VCE = VCES 300 μA

VGE = 0V TJ