东芝全新原装晶体管2SC3326-A 贴片SOT-23

封装 / 箱体：SOT-346

High emitter-base voltage: VEBO = 25 V (min)

• High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)

• Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

• High DC current gain: hFE = 200 to 1200

• Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 50 V

Collector-emitter voltage VCEO 20 V

Emitter-base voltage VEBO 25 V

Collector current IC 300 mA

Base current IB 60 mA

Collector power dissipation PC 150 mW

Junction temperature Tj 125 °C

Storage temperature range Tstg −55 to 125 °C