TIL113M
TIL113M
TIL113M
Features
■ High sensitivity to low input drive current
■ Meets or exceeds all JEDEC Registered
Specififications
■ UL, C-UL approved, File #E90700, Volume 2
■ IEC 60747-5-2 approved (ordering option V)
Applications
■ Low power logic circuits
■ Telecommunications equipment
■ Portable electronics
■ Solid state relays
■ Interfacing coupling systems of different potentials
and impedances
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and
TIL113M have a gallium arsenide infrared emitter
optically coupled to a silicon planar photodarlington.
封装 / 箱体: PDIP-6
输出类型: Photodarlington
通道数量: 1 Channel
If - 正向电流: 10 mA
最大集电极/发射极电压: 30 V
最大集电极电流: 150 mA
绝缘电压: 7500 Vrms
最大集电极/发射极饱和电压: 1.25 V
Vf - 正向电压: 1.5 V
Vr - 反向电压 : 6 V
Pd-功率耗散: 250 mW
最小工作温度: - 40 C
最大工作温度: + 100 C
系列: TIL113M
封装: Bulk
配置: 1 Channel
高度: 3.53 mm
长度: 8.89 mm
宽度: 6.6 mm
商标: ON Semiconductor / Fairchild
电流传递比: 300 %
Ordering Information
Marking Information
Suffifix Example Option
No Suffifix 4N32M Standard Through Hole Device (50 units per tube)
S 4N32SM Surface Mount Lead Bend
SR2 4N32SR2M Surface Mount; Tape and Reel (1,000 units per reel)
T 4N32TM 0.4" Lead Spacing
V 4N32VM VDE 0884
TV 4N32TVM VDE 0884, 0.4" Lead Spacing
SV 4N32SVM VDE 0884, Surface Mount
SR2V 4N32SR2VM VDE 0884, Surface Mount, Tape & Reel (1,000 units per reel)
