CT Micro宽爬电距光耦CT1018VT1W

CT Micro宽爬电距光耦CT1018VT1W

CT Micro宽爬电距光耦CT1018VT1W

 爬电距离：沿绝缘表面测得的两个导电零部件之间或导电零部件与设备防护界面之间的最短路径。即在不同的使用情况下，由于导体周围的绝缘材料被电极化，导致绝缘材料呈现带电现象。   电气间隙和爬电距离（爬电间隙一般被称作电气间隙，因电气间隙决定了爬电情况的发生与否，所以电气间隙也常被称作爬电间隙。）  

CT Micro宽爬电距光耦CT1018VT1W

CT Micro宽爬电距光耦CT1018VT1W

Features

• High isolation 5000 VRMS

• CTR flexibility available see order information

• Extra low coupling capacitance

• DC input with transistor output

• Temperature range - 55 °C to 125 °C

• External creepage distance > 8 mm

• Internal creepage distance > 4.6 mm

• Distances through insulation > 0.4 mm

• Green Package

• Regulatory Approvals

 UL - UL1577 (E364000)

 VDE - EN60747-5-5(VDE0884-5)

 CQC – GB4943.1, GB8898

 IEC60065, IEC60950

Applications

• Switch mode power supplies

• Computer peripheral interface

• Microprocessor system interface

Description

The CT1010-W, CT1011-W, CT1012-W, CT1013-W,

CT1014-W, CT1015-W, CT1016-W, CT1017-W,

CT1018-W, CT1019-W consists of a photo transistor

optically coupled to a gallium arsenide Infrared

emitting diode in a 4-lead SOP Package.

CT Micro宽爬电距光耦CT1018VT1W