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CT Micro 线性光耦CT817D-H
CT Micro 线性光耦CT817D-H
线性光耦是一种用于模拟信号隔离的光耦器件,和普通光耦一样,线性光耦真正隔离的是电流。线性光耦能够保护被测试对象和测试电路,并减小环境干扰对测试电路的影响。
CT Micro 线性光耦CT817D-H
CT Micro 线性光耦CT817D-H
Profile Feature Pb-Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (ts) from (Tsmin to Tsmax) 60-120 seconds
Ramp-up Rate (tL to tP) 3°C/second max.
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL) 60 – 150 seconds
Peak Body Package Temperature 260°C +0°C / -5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-down Rate (TP to TL) 6°C/second max
Time 25°C to Peak Temperature 8 minutes max.
Features
•High isolation 5000 VRMS
•CTR flexibility available see order information
•DC input with transistor output
•Operating temperature range - 55 °C to 110 °C
Applications
•Switch mode power supplies
•Computer peripheral interface
•Microprocessor system interface
Description
The CT817 series consists of a photo transistor
optically coupled to a gallium arsenide Infrared
emitting diode in a 4-lead DIP package different lead
forming options.
CT817D-H(HZD)
CT Micro
DIP
A/B/C/D
环保
3200/盒
美国
17+