CT Micro 非线性光耦 CT 4N35

CT Micro  非线性光耦 CT 4N35

CT Micro  非线性光耦 CT 4N35

非线性光耦的电流传输特性曲线是非线性的，这类光耦适合于开关信号的传输，不合适于传媒模拟量。常用的4N系列光耦属于非线性光耦。

CT Micro  非线性光耦 CT 4N35

Features

•High isolation 5000 VRMS

•CTR flexibility available see order information

•DC input with transistor output

•Operating temperature range - 55 °C to 110 °C

•Regulatory Approvals

UL - UL1577 (E364000)

VDE - EN60747-5-5(VDE0884-5)

CQC – GB4943.1, GB8898

IEC60065, IEC60950

Description

The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37,

4N38, H11A1, H11A2, H11A3, H11A4, H11A5 series

consists of a photo transistor optically coupled to a

gallium arsenide Infrared-emitting diode in a 6-lead

DIP package different lead forming options.

Applications

•Switch mode power supplies

•Computer peripheral interface

•Microprocessor system interface

Transfer Characteristics

Symbol Parameters Test Conditions Min Typ Max Units Notes

CTR

Current

Transfer

Ratio

4N35, 4N36, 4N37

IF= 10mA, VCE= 10V

100 - -

%

4N25,4N26, 4N38,

H11A2, H11A3

20 - -

4N27, 4N28, H11A4 10 - -

H11A1 50 - -

H11A5 30 - -

CT Micro  非线性光耦 CT 4N35