CT Micro 线性光耦晶体管 CT851

CT851

CT851 

CT851 

CT851 

Features

•••• High isolation 5000 VRMS

•••• CTR flexibility available see order information

•••• DC input with transistor output

•••• External Creepage ≥ 7.5mm (S/SL Type)

•••• External Creepage ≥ 8.0mm (SLM Type)

•••• Operating temperature range - 55 °C to 100 °C

•••• Regulatory Approvals

UL - UL1577 (E364000)

VDE - EN60747-5-5(VDE0884-5)

CQC – GB4943.1, GB8898

IEC60065, IEC60950

Description

The CT851 series consists of a high power transistor

optically coupled to a gallium arsenide

Infrared-emitting diode in a 4-lead DIP package

different lead forming options.

Applications

•••• Switch mode power supplies

•••• Computer peripheral interface

•••• Microprocessor system interface

Profile Feature Pb-Free Assembly Profile

Temperature Min. (Tsmin) 150°C

Temperature Max. (Tsmax) 200°C

Time (ts) from (Tsmin to Tsmax) 60-120 seconds

Ramp-up Rate (tL to tP) 3°C/second max.

Liquidous Temperature (TL) 217°C

Time (tL) Maintained Above (TL) 60 – 150 seconds

Peak Body Package Temperature 260°C +0°C / -5°C

Time (tP) within 5°C of 260°C 30 seconds

Ramp-down Rate (TP to TL) 6°C/second max

Time 25°C to Peak Temperature 8 minutes max.