IR 晶体管 MOSFET IRF540NPBF

IRF540NPBF

IRF540NPBF

IRF540NPBF

IRF540NPBF

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry

安装风格: Through Hole

封装 / 箱体: TO-220-3

通道数量: 1 Channel

晶体管极性: N-Channel

Vds-漏源极击穿电压: 100 V

Id-连续漏极电流: 33 A

Rds On-漏源导通电阻: 44 mOhms

Vgs - 栅极-源极电压: 20 V

Qg-栅极电荷: 47.3 nC

Pd-功率耗散: 140 W

配置: Single

封装: Tube

高度: 15.65 mm  

长度: 10 mm  

晶体管类型: 1 N-Channel  

宽度: 4.4 mm  

商标: Infineon Technologies  

产品类型: MOSFET  

工厂包装数量: 1000