TOSHIBA 线性光耦 TLP785(GB-TP6 F

TLP785(GB-TP6 F

TLP785(GB-TP6 F

TLP785(GB-TP6 F

TLP785(GB-TP6 F

The TOSHIBA TLP785 consists of a silicone phototransistor optically

coupled to a gallium arsenide (GaAs) infrared emitting diode in a four

lead plastic DIP (DIP4) with having high isolation voltage

(AC: 5kVRMS (min)).

TLP785F is a lead forming type for the long creepage surface mounting

of TLP785.

• TLP785: 7.62mm pitch type DIP4

• TLP785F: 10.16mm pitch type DIP4

• Collector-emitter voltage: 80V (min.)

• Current transfer ratio: 50% (min.)

Rank GB: 100% (min.)

• Isolation voltage: 5000Vrms (min.)

• UL approved: UL1577, file No. E67349

• BSI under application: BS EN60065:2002

BS EN60950-1:2006

• SEMKO under application:EN60065:2002

EN60950-1:2001, EN60335-1:2002

• Option(D4)type

VDE approved: DIN EN60747-5-2

(Note): When an EN60747-5-2 approved type is needed,

Please designate “Option (D4)”

.

• Construction mechanical rating

7.62mm Pitch

Standard Type

10.16mm Pitch

TLPxxxF Type

Creepage distance 7.0mm(min) 8.0mm(min)

Clearance 7.0mm(min) 8.0mm(min)

Insulation thickness 0.4mm(min) 0.4mm(min)

Inner creepage distance 4.0mm(min) 4.0mm(min)