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CategoriesDiscrete Semiconductor Products > Transistors - FETs, MOSFETs - SingleSeriesHEXFET®PackagingTubePart StatusActiveFET TypeN-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)40VCurrent - Continuous Drain (Id) @ 25°C202A (Tc)Drive Voltage (Max Rds On, Min Rds On)10VVgs(th) (Max) @ Id4V @ 250μAGate Charge (Qg) (Max) @ Vgs196nC @ 10VInput Capacitance (Ciss) (Max) @ Vds5669pF @ 25VVgs (Max)±20VFET Feature-Power Dissipation (Max)333W (Tc)Rds On (Max) @ Id, Vgs4 mOhm @ 121A, 10VOperating Temperature-55°C ~ 175°C (TJ)Mounting TypeThrough HoleSupplier Device PackageTO-220ABPackage / CaseTO-220-3
40v
25W
TO-220
-55°C ~ 175°C