供应东沅场效应管 FKBB0214 N沟道MOSFET

Fet/东沅 FKBB0214 PRPAK3x3 N沟道100V快速开关MOSFET

FKBB0214 Features

● Advanced Trench MOS Technology
● Low Gate Charge
● 100% EAS Guaranteed
● Green Device Available

FKBB0214 Application
● Portable Equipment
● Battery Powered Systems
● Hard Switching and High-Speed Circuit

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 100V
● Static Drain-Source On-Resistance
VGS=10V , ID=3A: 130~152mΩ
VGS=4.5V , ID=2A: 133~158mΩ
● Gate Threshold Voltage: 1.0~2.5V
● Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃: 10uA
VDS=80V , VGS=0V , TJ=55℃: 100uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 10.2S
● Gate Resistance: 1.5Ω
● Total Gate Charge: 25.5nC
● Gate Source Charge: 4.2nC
● Gate-Drain Charge: 4.3nC
● Turn-On Delay Time: 17.3ns
● Rise Time: 2.8s
● Turn-Off Delay Time: 50ns
● Fall Time: 2.8ns
● Input Capacitance: 1077pF
● Output Capacitance: 46pF
● Reverse Transfer Capacitance: 32pF

产品规格书（部分）