供应FKBB3909 东沅N和P沟道双路MOSFET

Fet/东沅 FKBB3909 PRPAK3x3 N和P沟道快速开关MOSFET

FKBB3909 Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: ±30V
● Static Drain-Source On-Resistance
VGS=±10V , ID=±10A: 20mΩ
VGS=±4.5V , ID=±5A: 30mΩ
● Gate Threshold Voltage: ±1.2~±2.5V
● Drain-Source Leakage Current
VDS=±24V , VGS=0V , TJ=25℃: 1uA
VDS=±24V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 4.5S
● Total Gate Charge: 7.2nC
● Gate Source Charge: 1.4nC
● Gate-Drain Charge: 2.2nC
● Turn-On Delay Time: 4.1ns
● Rise Time: 9.8s
● Turn-Off Delay Time: 15.5ns
● Fall Time: 6.0ns
● Input Capacitance: 572pF
● Output Capacitance: 81pF
● Reverse Transfer Capacitance: 50pF

FKBB3909产品规格书（部分）