供应蓝箭 BSS138 P沟道场效应管 SOT-23封装

BlueRocket/蓝箭电子 BSS138 SOT-23塑封封装N沟道场效应管

Electrical Characteristics(Ta=25℃)
● Drain–Source Breakdown Voltage: 50V
● Zero Gate Voltage Drain Current
VGS=0 VDS=50V: 0.5 μA
VGS=0 VDS=30V: 0.1μA
● Gate-Body Leakage: ±10μA
● Gate Threshold Voltage: 0.8V 1.6V 1.8V
● Static Drain–Source On–Resistance
RDS(on)(1): 1.9~3.5Ω
RDS(on)(2): 2.5~6.0Ω
Forward Transconductance: 0.12~0.5S
● Drain-Source Diode Forward Voltage: 0.8~1.4V
● Input Capacitance: 50pF
● Output Capacitance: 25pF
● Reverse Transfer Capacitance: 8pF
● Gate resistance: 9Ω
● Turn–On Delay Time: 2.5~5ns
● Turn–On Rise Time: 9~18ns
● Turn–Off Delay Time: 20~36ns
● Turn–Off Fall Time: 7~14ns

Applications

BSS138 Low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

BSS138产品规格书（部分）