供应BRD50N03 蓝箭N沟道MOS场效应管

BlueRocket/蓝箭电子 BRD50N03 TO-252塑封封装N沟道MOS场效应管

Descriptions

BRD50N03 N-CHANNEL MOSFET in a TO-252 Plastic Package.

Electrical Characteristics(Ta=25℃)
● Drain–Source Breakdown Voltage: 30V
● Zero Gate Voltage Drain Current: 1.0μA
● Gate-Body Leakage CurrentForward: ±0.1μA
● Gate Threshold Voltage: 1~2.5V
● Total Gate Charge: 14~22nC
● Static Drain–Source On–Resistance
VGS=10V ID=70A: 7~9mΩ
VGS=4.5V ID=35A: 17mΩ
● Drain-Source Diode Forward Voltage: 1.5V
● Input Capacitance: 1140pF
● Output Capacitance: 137pF
● Reverse Transfer Capacitance: 118pF
● Turn–On Delay Time: 20~50ns
● Turn–On Rise Time: 100~210ns
● Turn–Off Delay Time: 80~170ns
● Turn–Off Fall Time: 85~180ns

BRD50N03产品规格书（部分）