供应ERIS P5MND6P5 PPAK5X6

ERIS  P5MND6P5 PPAK5X6 21+

General Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency fast switching

applications.