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ERIS P3MND6P5 PPAK3X3 21+
General Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency fast switching
applications.
P3MND6P5
ERIS
PPAK3X3
21+
原厂