优势供应*童三*管BU406、BU406TU、BU406三*管

BU406

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 400 V
VCEO Collector-Emitter Voltage 200 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current (DC) 7 A
ICP Collector Current (Pulse) 10 A
IB Base Current 4 A
PC Collector Dissipation 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C