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8A, 1200V H*erfast Diode
The RHRP8120 is a h*erfast diodes with soft recovery
characteristics (t
rr
< 55ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride p*ivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and h*erfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental t*e TA49096.
Symbol
Features
• H*erfast with Soft Recovery. . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
否
快恢复二*管
是
FAIRCHILD/*童
RHRP8120
硅(Si)
8A 1200V
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