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Infineon Technologies S25FL128S FL-S NOR Flash Memory Devices are a 2.7V to 3.6V / 1.65V to 3.6V VIO Volt non-volatile memory using 65nm MIRRORBIT? technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single-bit serial input and output (Single I/O or SIO), optional two-bit (Dual I/O or DIO), and four-bit (Quad I/O or QIO) serial commands.
As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by various embedded applications. Infineon Technologies S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Infineon | |
产品种类: | NOR闪存 |
RoHS: | 详细信息 |
SMD/SMT | |
WSON-8 | |
S25FL128S | |
128 Mbit | |
2.7 V | |
3.6 V | |
100 mA | |
SPI | |
133 MHz | |
16 M x 8 | |
8 bit | |
Synchronous | |
- 40 C | |
%2B 85 C | |
Tube | |
结构: | Eclipse |
商标: | Infineon Technologies |
存储类型: | NOR |
湿度敏感性: | Yes |
产品类型: | NOR Flash |
速度: | 133 MHz |
2050 | |
子类别: | Memory & Data Storage |
商标名: | MirrorBit |
单位重量: | 210 mg |
WSON-8
128 Mbit
- 40 C
+85C
133 MHz