供应 S25FL128SAGNFI001 存储器 IC NOR闪存

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 S25FL128SAGNFI001
 S25FL128SAGNFI001
 S25FL128SAGNFI001

S25FL128SAGNFI001






Infineon Technologies S25FL128S NOR Flash Memory Devices

Infineon Technologies S25FL128S FL-S NOR Flash Memory Devices are a 2.7V to 3.6V / 1.65V to 3.6V VIO Volt non-volatile memory using 65nm MIRRORBIT? technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single-bit serial input and output (Single I/O or SIO), optional two-bit (Dual I/O or DIO), and four-bit (Quad I/O or QIO) serial commands. 

As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by various embedded applications. Infineon Technologies S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.



Infineon
产品种类:NOR闪存
RoHS: 详细信息
SMD/SMT
WSON-8
S25FL128S
128 Mbit
2.7 V
3.6 V
100 mA
SPI
133 MHz
16 M x 8
8 bit
Synchronous
- 40 C
%2B 85 C
Tube
结构:Eclipse
商标:Infineon Technologies
存储类型:NOR
湿度敏感性:Yes
产品类型:NOR Flash
速度:133 MHz
2050
子类别:Memory & Data Storage
商标名:MirrorBit
单位重量:210 mg


封装 / 箱体:

WSON-8

存储容量:

128 Mbit

最小工作温度:

- 40 C

最大工作温度:

+85C

最大时钟频率:

133 MHz