衰减器 DAT-31R5A-SP+ 衰减器，深圳进口原装现货，价格优势，可订货

DAT-31R5A-SP+


50Ω 0至31.5 dB，0.5 dB阶跃直流至4.0 GHz


产品特点


•免疫锁定


•卓越的精度，0.1 dB典型值


•串行控制接口


•低插入损耗


•高IP3，+52 dBm典型值


•极低的直流功耗


•出色的回波损耗，20 dB典型值


•小尺寸4.0 x 4.0 mm


典型应用


•基站基础设施


•便携式无线


•有线电视和直播电视


•MMDS和无线局域网


•无线本地环路


•UNII和Hiper局域网


•功率放大器失真消除环路


一般说明


DAT-31R5A-SP+为50Ω 提供0至31.5 dB可调衰减的数字步进衰减器


以0.5 dB的步长。该控制器是一个6位串行接口，在单（正）电源电压下工作。


DAT-31R5A-SP+采用独特的硅CMOS工艺生产，具有砷化镓的性能


具有传统CMOS器件的优点。


重要的是


•宽带，工作频率高达4 GHz


•对番茄酱免疫


•高IP3，52 dBm


产品概述


DAT-31R5A+系列50Ω 数字步进衰减器提供从0到31.5的可调衰减


以0.5 dB的步长计算。控制装置为6位串行/并行接口，衰减器可通过以下任一方式工作：


单正极或双（正极和负极）电源电压。已生产DAT-31R5A+系列型号


通过硅上独特的CMOS工艺，提供了具有传统CMOS器件优势的砷化镓性能。

DAT-31R5A-SP+

50Ω 0 to 31.5 dB, 0.5 dB Step DC to 4.0 GHz

Product Features

• Immune to latch up

• Excellent accuracy, 0.1 dB Typ

• Serial control interface

• Low Insertion Loss

• High IP3, +52 dBm Typ

• Very low DC power consumption

• Excellent return loss, 20 dB Typ

• Small size 4.0 x 4.0 mm

Typical Applications

• Base Station Infrastructure

• Portable Wireless

• CATV & DBS

• MMDS & Wireless LAN

• Wireless Local Loop

• UNII & Hiper LAN

• Power amplifier distortion canceling loops

General Description

The DAT-31R5A-SP+ is a 50Ω digital step attenuator that provides adjustable attenuation of 0 to 31.5 dB

in 0.5 dB steps. The control is a 6-bit serial interface, operating with a single (positive) supply voltage.

DAT-31R5A-SP+ is produced by a unique CMOS process on silicon, offering the performance of GaAs

with the advantages of conventional CMOS devices.

The Big Deal

• Wideband, operates up to 4 GHz

• Immune to latchup

• High IP3, 52 dBm

Product Overview

The DAT-31R5A+ series of 50Ω digital step attenuators provides adjustable attenuation from 0 to 31.5

dB in 0.5 dB steps. The control is a 6-bit serial/parallel interface, and the attenuators operate with either

single positive or dual (positive and negative) supply voltage. DAT-31R5A+ series models are produced

by a unique CMOS process on silicon, offering the performance of GaAs with the advantages of conventional CMOS devices.