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ADT2-1T-1P+
50Ω 8至600兆赫
特征
•出色的回波损耗,15 dB典型值。
•出色的振幅不平衡,0.1 dB典型值。
和相位不平衡,1度典型值。
•高达1瓦的高射频功率
•水性可洗
应用
•阻抗匹配
工作温度-40°C至85°C
储存温度-55°C至100°C
射频功率1W
直流电流30mA
ADT2-1T-1P+
封装:CD542
+符合RoHS标准
+后缀表示RoHS合规性。
ADT2-1T-1P+
50Ω 8 to 600 MHz
Features
• excellent return loss, 15 dB typ.
• excellent amplitude unbalance, 0.1 dB typ.
and phase unbalance, 1 deg. typ.
• high RF power up to 1 watt
• aqueous washable
• protected under US patent 6,133,525
• impedance matching
• baluns
Operating Temperature -40°C to 85°C
Storage Temperature -55°C to 100°C
RF Power 1W
DC Current 30mA
Permanent damage may occur if any of these limits are exceeded.
ADT2-1T-1P+
CASE STYLE: CD542
+RoHS Compliant
ADT2-1T-1P+
MINI
CD542
20+
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