AO4480 SOP8 贴片 n沟道增强模式场效应晶体管

General Description

The AO4480 uses advanced trench technology to

provide excellent RDS(ON), low gate charge. It is ESD

Protected. This device is suitable for use as a low side

switch in SMPS and general purpose applications

Product Summary

VDS (V) = 40V

ID = 14A (VGS = 10V)

RDS(ON) < 11.5mΩ (VGS = 10V)

RDS(ON) < 15.5mΩ (VGS = 4.5V)

ESD Rating: 4KV HBM

100% UIS Tested

100% Rg Tested

BVDSS 40 V

1

TJ=55°C 5

IGSS ±100 μA

VGS(th) 1 2 3 V

ID(ON) 70 A

9 11.5

TJ=125°C 13

12 15.5 mΩ

gFS 50 S

VSD 0.7 1 V

IS 4 A

Ciss 1600 1920 pF

Coss 320 pF

Crss 100 pF

Rg 3.4 Ω

Qg

(10V) 22 nC

Qg

(4.5V) 10.5 nC

Qgs 4.2 nC

Qgd 4.8 nC

tD(on) 3.5 ns

tr 6 ns

tD(off) 13.2 ns

tf 3.5 ns

trr 31 ns

Qrr 33 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=14A, dI/dt=100A/μs

Drain-Source Breakdown Voltage

On state drain current

ID=250uA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=14A

Reverse Transfer Capacitance

IF=14A, dI/dt=100A/μs

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

IDSS uA

Gate Threshold Voltage VDS=VGS ID=250μA

VDS=32V, VGS=0V

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

RDS(ON) Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

mΩ

VGS=4.5V, ID=5A

IS=1A,VGS=0V

VDS=5V, ID=14A

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=20V, RL=1.5Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Gate Drain Charge

VGS=0V, VDS=20V, f=