供应仙童三极管/BUT11A

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  BUT11/11A High Voltage Power Switching Applications，

NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Electrical Characteristics TC=25°C unless otherwise noted * Pulsed: pulsed duration = 300μs, duty cycle = 1.5% Thermal Characteristics TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BUT11 : BUT11A 850 1000 V VCEO Collector-Emitter Voltage : BUT11 : BUT11A 400 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Collector Dissipation (TC=25°C) 100 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BUT11 : BUT11A IC = 100mA, IB = 0 400 450 V V ICES Collector Cut-off Current : BUT11 : BUT11A VCE = 850V, VBE = 0 1 1 mA mA IEBO Emitter Cut-off Current VBE = 9V, IC = 0 10 mA VCE(sat) Collector-Emitter Saturation Voltage : BUT11 : BUT11A IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A 1.5 1.5 V V VBE(sat) Base-Emitter Saturation Voltage : BUT11 : BUT11A IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A 1.3 1.3 V V tON Turn On Time VCC = 250V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 100Ω 1 μs tSTG Storage Time 4 μs tF Fall Time 0.8 μs