供应场效应管晶体管 STW9N150

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N-channel 1500V - 2.2Ω - 8A - TO-247
Very high voltage PowerMESH™ Power MOSFET

■ 100% avalanche tested
■ Avalanche ruggedness
■ Gate charge minimized
■ Very low intrinsic capacitances
■ High speed switching
■ Very low on-resistance
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.