IRF640NPBF 场效应管 TO-220 N沟道 18A/200V IR MOS管 IRF640N

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产品详情

The IRF640NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.

Drain to source voltage Vds is 200V
Gate to source voltage is ±20V
On resistance Rds(on) of 150mohm
Power dissipation Pd of 150W at 25°C
Continuous drain current Id of 18A at Vgs 10V and 25°C
Operating junction temperature range from -55°C to 175°C

实物拍摄

IRF640NPBF (1)_副本

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品牌

IR/国际整流器

型号

IRF640NPBF

导电方式

增强型

沟道类型

N沟道

封装外形

CER-DIP/陶瓷直插

材料

N-FET硅N沟道

用途

A/宽频带放大

种类

绝缘栅(MOSFET)