三*管 13003

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1:FEATUR*

Power switching applications

2:MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

symbol	parameter	value	units
Vcbo	Collector-Base Voltage	600	V
Vceo	Collector-Emitter Voltage	450	V
Vebo	Emitter-Base Voltage	9	V
Ic	Collector Current-Continuous	0.3	A
Pc	Collector Power Dissipation	0.8	W
TJ	Junction Temperature	150	℃
Tstg	Storage Temperature	-55-150	℃

3:ELE*RICAL CHARA*ERISTICS (Tamb=25℃unless otherwise specified)

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)cbo	IC=100uA IE=0	600			V
Collector-emitter breakdown voltage	V(BR)ceo	IC=1mA IB=0	450			V
Emitter-base breakdown voltage	V(BR)ebo	IE=100uA IC=0	9			V
Collector cut-off Current	Icbo	Vcb=600V IE=0			100	uA
Collector cut-off Current	Iceo	Vce=400V IB=0			200	uA
Emitter cut-off Current	Iebo	Veb=9V IC=0			100	uA
DC Current gain	hEF(1)	Vce=20VIC=20 mA	10		40
DC Current gain	hEF(2)	Vce=10VIC=0.25mA	5
Collector-emitter saturation voltage	VCE(sat)	IC=50mA IB=10 mA			0.5	V
Base -emitter saturation voltage	VBE(sat)	IC=50mA IB=10 mA			1.2	V
Transition frequency	fT	Vce=20VIC=20 mA f=1MHZ	8			MHZ
Fall time	tf	VCC=45V IC=50Ma IB1=-IB2=5mA			0.3	US
Storage time	ts	VCC=45V IC=50Ma IB1=-IB2=5mA			1.5	US

4:CLASSIFICATION OF hEF(1)

Rank
Range	15-18	18-20	20-23	23-25	25-28	28-30

5:PIN ARRAY

1. BASE 2.COLLE*OR 3. EMITTER

品牌/商标

型号/规格

MJE13003

应用范围

功率

材料

硅(Si)

*性

NPN型

击穿电压VCBO

600（V）

集电*允许电流ICM

0.3（A）

集电*耗散功率PCM

0.8（W）

截止频率fT

8（MHz）

结构

平面型

封装形式

TO-126

封装材料

塑料封装

供应三*管 13003