原装NXP贴片高频管 BFG135
地区：广东 深圳
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| VCEO | collector-emitter voltage | IB = 0 A | 15 | V | ||
| IC | collector current | 150 | mA | |||
| Ptot | total power dissipation | Tsp ≤ 145 °C | 1000 | mW | ||
| hFE | DC current gain | VCE = 10 V; IC = 100 mA | 80 | 130 | ||
| fT | transition frequency | VCE 10 V; IC = 100 mA; f = 1 GHz; Tamb = 25 °C | 7 | GHz | ||
| GUM | peak unilateral power gain | f = 500 MHz; IC = 100 mA; VCE = 10 V; Tamb = 25 °C | 16 | dB | ||
| GUM | peak unilateral power gain | f = 800 MHz; IC = 100 mA; VCE = 10 V; Tamb = 25 °C | 12 | dB |
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NXP/恩智浦
BFG135
硅(SI)
贴片型
