原装NXP贴片高频管 BFG21W SOT343
地区:广东 深圳
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VCEO | collector-emitter voltage | IB = 0 mA; open base | 4.5 | V | ||
IC | collector current (DC) | 500 | mA | |||
Ptot | total power dissipation | Tsp ≤ 60 °C [0] | 600 | mW | ||
fT | transition frequency | VCE = 3.6 V; IC = 200 mA; f = 700 MHz | 18 | GHz | ||
GUM | peak unilateral power gain | f = 1900 MHz; IC = 1 mA; VCE = 3.6 V; Tsp ≤ 60 °C | 10 | dB | ||
ηC | collector efficiency | f = 1900 MHz; VCE = 3.6 V; PL = 26 dBm | 55 |
放大
NXP/恩智浦
BFG21W
硅(Si)
SOT343