BSC109N10NS3 G,BSC109N10,场效应管
地区：广东 深圳
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| 型号 | 封装 | 品牌 | 类型 | 极性 | 电压 | 电流 | 内阻 |
| BSC252N10NSFG | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 40A | 0.0252Ω |
| BSC070N10NS3G | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 90A | 0.007Ω |
| BSC196N10NSG | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 45A | 0.0196Ω |
| BSC100N10NSFG | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 90A | 0.01Ω |
| BSC079N10NSG | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 100A | 0.0079Ω |
| BSC118N10NSG | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 71A | 0.0118Ω |
| BSC060N10NS3G | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 90A | 0.006Ω |
| BSC252N10NSFG | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 40A | 0.0252Ω |
| BSC265N10LS | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 40A | 0.0265Ω |
| BSC082N10LSG | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 100A | 0.0082Ω |
| BSC109N10NS3G | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 63A | 0.0109Ω |
| BSC046N10NS3G | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 100A | 0.0046Ω |
| BSC159N10LS | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 63A | 0.0159Ω |
| BSC105N10LSFG | QFN-8 5*6/PG-TDSON-8 | infineon | SMD/MOS | N场 | 100V | 90A | 0.0105Ω |
"
INFINEON/英飞凌
BSC109N10NS3G
绝缘栅(MOSFET)
N沟道
增强型
S/开关
SMD(SO)/表面封装
N-FET硅N沟道
