场效应管 HFS4N60 HFS5N60S CMF5N60

HFS4N60,MOS,600V,4A,2.5Ω HFS5N60S,MOS,600V,4.5A,2.5Ω,220F

Originative New  Design
Superior Avalanche  Rugged  Technology
Robust  Gate  Oxide  Technology
Very Low  Intrinsic  Capacitances
Excellent Switching  Characteristics
Unrivalled  Gate  Charge  :  15 nC (Typ.)
Extended  Safe  Operating  Area
Lower  RDS(ON) :  2.0  ? (Typ.) @VGS=10V
100% Avalanche Tested