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本月早些时候,我们报道了美光的16 Gb DDR4内存芯片,该芯片采用该公司的第二代10纳米级制造工艺(也称为1Y nm)生产。这些DRAM芯片已经在用于威刚和英睿达的32 GB DDR4内存条中,这些产品也将不久后上市。
早在4月份,为了应对DRAM和新工艺技术需求的增加,美光存储台湾(前雷克斯光电半导体)新洁净室破土动工。
美光储存(台湾)早已在使用美光的第一代10纳米级制造技术(也称为1X nm)制造DRAM产品,并将在不久的将来直接进入第3代10纳米级工艺(又名1Z nm) 。与此同时,去年美光在台中附近开辟了一个新的测试和包装设施,创造了世界上唯一的垂直集成DRAM生产设施之一。
此外,美光公司宣布计划在日本广岛附近的公厂内投入20亿美元用于新的洁净室。据报道,新的产能将用于制造美光13纳米工艺技术的DRAM。
总的来说,美光将拥有多个10纳米级节点。除了目前使用的第一代和第二代10纳米级工艺技术外,美光还计划推出至少四种10纳米级制造工艺:1Z,1α,1β和1γ。
目前,美光公司正在生产第二代10纳米级制造工艺(即1Y nm),包括该公司的12 Gb LPDDR4X以及16 Gb DDR4存储器件。
该公司的下一代1Z nm目前已获得客户的认可(即,他们正在测试使用该工艺生产的各种芯片),预计将在近期宣布,该技术将用于生产16 Gb LPDDR5存储器件以及DDR5存储器件。
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