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Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
• JEDEC standard 1.8V I/O (SSTL_18-compatible)
• Double data rate interface: two data transfers
per clock cycle
• Differential data strobe (DQS, DQS)
• 4-bit prefetch architecture
• On chip DLL to align DQ and DQS transitions
with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL) 3, 4, 5, 6, and
7 supported
• Posted CAS and programmable additive latency
(AL) 0, 1, 2, 3, 4, 5, and 6 supported
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength, full and
reduced strength options
• On-die termination (ODT)
IS43DR16128C-25DBLI
ISSI
BGA84
2090