The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device
containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M
words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where
data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby
current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate
power supply from the device core.
